SEOUL, South Korea / RankWire.AI / – Samsung Electronics has unveiled innovative approaches for memory and storage technology intended to enhance artificial intelligence infrastructure performance. The company shared these plans at the 2026 OCP Global Summit in San Jose, California, which took place from October 12 to 15. Its development roadmap emphasizes high-performance memory, expanding memory via Compute Express Link, and next-generation solid-state drives. Additionally, Samsung will collaborate with AMD on a joint CXL demonstration. These initiatives aim to address current AI server capacity limitations.

Samsung outlined its strategy through three primary objectives: enhancing speed, increasing memory scalability, and ensuring data persistence. To improve speed, the company introduced customized high-bandwidth memory alongside the eighth-generation HBM5 technology. For scalability, it promoted CXL as a method to add capacity beyond the memory installed within each server. Regarding data persistence, Samsung presented next-generation SSD-based storage and management solutions. The company also showcased storage software designed to boost data processing efficiency in AI systems.
Samsung noted that the increasing deployment of AI agents is fueling the need for more memory during inference. Larger AI models generate more data while producing responses, and this data must be readily accessible to processors. Traditional systems limit the amount of memory each processor can access. Samsung introduced CXL technology as a practical solution to overcome this restriction. It also highlighted key-value cache optimization, which allows AI models to reuse previously processed data instead of repeating the same computations.
Partnership with AMD Expands to CXL Memory Expansion Solutions
Samsung and AMD will jointly demonstrate a CXL-based system that increases memory capacity in AI applications. This technology enables processors to share memory resources instead of relying solely on local server memory. Samsung confirmed that engineers have tested the solution in real-world system environments. The demonstration builds upon a memorandum of understanding signed by both companies in March 2026, focusing on next-generation AI memory and computing. AMD CEO Lisa Su visited Korea on October 7 and met Jeon Young-hyun, Vice Chairman of Samsung’s Device Solutions division.
Memory pooling was another feature highlighted in Samsung’s showcase. The company demonstrated CMM-D, a CXL-based DRAM module that links multiple memory units into a single shared pool. This allows systems to draw capacity from the pool as workload demands increase. Samsung also showcased processing-in-memory technology, which performs certain calculations within memory chips to reduce data movement and energy consumption. Exhibits included 2-nanometer gate-all-around wafers, Groq LPU wafers, and Nvidia’s Groq 3 LPX system.
Early Co-Design Efforts Shape Samsung’s AI Memory Development Roadmap
In an executive session, Shim Ho-jun, Corporate Vice President and head of Samsung’s Application Engineering Team, outlined the company’s plans. He emphasized that larger AI models and increasing inference demands make greater memory capacity and bandwidth essential for optimal system performance. Shim also mentioned that Samsung is expanding co-design and technical validation collaborations with global partners from the earliest stages of development. The goal is to better align memory and storage products with customer system designs.
Samsung MAX Lab provides clients a platform to evaluate memory and storage solutions under real-world AI workloads. The facility also offers co-design services tailored to specific system configurations. Customers can test pre-commercial technologies, including PIM and next-generation SSDs, before they are commercially available. Samsung participated in the summit as a Diamond Sponsor. This event follows the company’s appearances in 2026 at Nvidia GTC, COMPUTEX, and the Future of Memory and Storage conference, as part of its expanding presence in AI memory technology.
